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Sunday, May 17, 2020 | History

2 edition of Computer simulation of the sputtering process found in the catalog.

Computer simulation of the sputtering process

by Norman S. Levy

  • 319 Want to read
  • 26 Currently reading

Published by Naval Postgraduate School in Monterey, California .
Written in English

    Subjects:
  • Nuclear physics

  • Edition Notes

    ContributionsNaval Postgraduate School (U.S.)
    The Physical Object
    Pagination1 v. :
    ID Numbers
    Open LibraryOL25174214M

    Research on sputtering and its application was accompanied by the development of computer simulation codes mainly based on Monte Carlo simulations of binary collision processes []. Today the most spread simulation software is SRIM [16], because of its convenient user interface and its extensive database on compound target materials and. Computer simulations are a powerful, cost-effective tool to increase the understanding of the process which is otherwise difficult to obtain through theoretical models and experiments. This thesis presents the integration and implementation of a comprehensive 3D computational framework for the simulation of magnetron sputtering discharges in Cited by: 1.

      The computer simulations serve to explain the reactive gas gettering and the corresponding process behavior in the box and in the chamber, respectively. Experimental and computer simulation studies of the “baffled target” reactive sputtering process Journal of Vacuum Science & Technology A 21, ( Cited by: 6. Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution.

    Abstract A brief description of the preliminary results of the computer simulation of the sputtering of single crystals of Ge with 1 keV Ar + ions is presented. The simulation reproduces experimental ejection patterns very well. Focussing events are not observed to contribute to the ejection pattern. In physics, sputtering is a phenomenon in which microscopic particles of a solid material are ejected from its surface, after the material is itself bombarded by energetic particles of a plasma or gas. It occurs naturally in outer space, and can be an unwelcome source of wear in precision components. However, the fact that it can be made to act on extremely fine layers of material is utilised.


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Computer simulation of the sputtering process by Norman S. Levy Download PDF EPUB FB2

Organized into three parts for ease of use, this Handbook introduces the fundamentals of thin films and sputtering deposition, explores the theory and practices of this field, and also covers new technology such as nano-functional materials and MEMS. Sputtering is caused by a series of atomic collisions between the incident projectiles and target atoms and between the target atoms themselves.

These collision cascades can be followed with computer programs and with the Boltzmann transport by: Computer simulations of sputtering have contributed greatly to such purposes and to elucidate the pertinent processes. In what follows, we give a quantitative account of and highlight the results obtained mainly by us from computer simulations of by: 9.

Request PDF | Computer Simulation of the Sputtering Process | Sputtering is caused by a series of atomic collisions between the incident projectiles and target atoms and between the target atoms.

Present computers have neither enough memory capacity nor computation speed to completely simulate the sputtering process.

The conclusions reported here were obtained with purely repulsive potential functions. Surface binding energies were included artificially. The simulations produce excellent spot patterns, but only approximately correct sputtering by: The influence of a surface roughness on sputtering is studied using a Monte Carlo simulation code ACAT.

In order to estimate this influence in ACAT calculation, the ACAT code is modified. LISTOFFIGURES iliconTetrahedralArrangement 97 dMicrocrystalite 98 nLattice,()Surface 99 4.

()SurfaceImpactPoints nLattice. Abstract Present computers have neither enough memory capacity nor computation speed to completely simulate the sputtering process. The conclusions reported here were obtained with purely repulsive potential functions.

Surface binding energies were included artificially. Computer Simulation. Features of Sputter Deposition. Roles of Sputtering Gas in Sputter Deposition. Significance of Analysis of the Transport Process of Sputtered Particles Through Sputtering Gas. Analysis of the Transport Process of Sputtered Particles by MC Method.

Applications. Summary. References. Y. Yamamura and M. Ishida, Monte-Carlo simulation of the thermalization of the sputtered atoms and reflected atoms in the magnetron sputtering discharge, J.

Vac. Sci. Technol. A 13 (), 1, –Cited by: 2. Another approach to obtain a value for the sputter yield is to simulate the overall sputtering process (see [13] for an overview).

The most commonly used simulation package is the well known SRIM code [16] developed by Ziegler et al. and completely described in their book [17].

Figures 2 and 3 were simulated using this by: This book walks you through the physics of Magnetron Sputtering in a step-by-step fashion. Starting with the magnetic fields crucial to efficient operation, the book then looks at the electric fields that power the sputter process, the motion of electrons in the plasma, target erosion and finally deposition.

The new chapter on the sputtering yield undertakes the task to compare experimental data with values calculated by computer simulation. This is done by fitting the calculated values with an empirical formula proposed a few years ago, which describes the energy dependence of the sputtering yield at normal incidence.

New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available. All applications discussed are supported by theoretical discussions, offering readers both.

Molecular-dynamics simulation of sputtering Herbert M. Urbassek Fachbervich Physik. UniversitUt Kaisersiautem, Envin-Schriidinger-Straae. D Kaiserslautem. Germany Abstract A review is given on the method of molecular-dynamics computer simulation, and on the results obtained on the physics of sputtering.

In the family of Physical Vapour Deposition techniques, sputtering is one of the most important over the past 40 years. In this book, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process.

Computer simulation and data compilation of sputtering yield by hydrogen isotopes (1H+, 2D+, 3T+) and Helium (4He+) ion impact from monatomic solids at Author: Yasunori Yamamura, Kazuho Sakaoka, H. Tawara.

In the?rst chapter of this book (Chap. 1), the details of the sputter process are discussed. Essential to sustain the discharge is the electron emission during ion bombardment. Indeed, the emitted electrons are accelerated from the target and can ionize gas atoms.

New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage availableAll applications discussed are supported by theoretical discussions, offering readers both the "how" and the "why" of each technique40% revision: the new edition.

Download Chemical Process Modelling and Computer Simulation By Amiya K. Jana – The chemical process industries are faced with an increasingly competitive environment, ever-changing market conditions, and government hstanding these constraints, the industries have to continuously keep on increasing their productivity and profitability for survival in the market.

New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available All applications discussed are supported by theoretical discussions, offering readers both the "how" and the "why" of each techniqueAuthor: Kiyotaka Wasa.

So it seems only CVD kind of process is possible to perform the i want to observe is the sputtering uniformity on the target, which i understand is highly dependent on strength and shape of the field.Earlier books on this subject, i.e. "Sputtering by Particle Bombardment I - III" are nearly 20 years old, but since then a lot of new and important work has been performed and published in international journals.

The planned book brings an overview about all the new results. This concerns.